Monte Carlo modeling of phonon transport in nanodevices
نویسندگان
چکیده
منابع مشابه
Adjoint-based deviational Monte Carlo methods for phonon transport calculations
In the field of linear transport, adjoint formulations exploit linearity to derive powerful reciprocity relations between a variety of quantities of interest. In this paper, we develop an adjoint formulation of the linearized Boltzmann transport equation for phonon transport. We use this formulation for accelerating deviational Monte Carlo simulations of complex, multiscale problems. Benefits i...
متن کاملReview of Monte Carlo modeling of light transport in tissues.
A general survey is provided on the capability of Monte Carlo (MC) modeling in tissue optics while paying special attention to the recent progress in the development of methods for speeding up MC simulations. The principles of MC modeling for the simulation of light transport in tissues, which includes the general procedure of tracking an individual photon packet, common light-tissue interactio...
متن کاملHybrid CA/Monte Carlo Modeling of Charge Transport in Semiconductors
We report on the modeling of ultra-small MOS devices using a newly developed full band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Monte-Carlo/Cellular Automata simulation engine self-consistently coupled with a 2D and 3D multi-grid Poisson solver.
متن کاملFull-dispersion Monte Carlo simulation of phonon transport in micron-sized graphene nanoribbons
We simulate phonon transport in suspended graphene nanoribbons (GNRs) with real-space edges and experimentally-relevant widths and lengths (from submicron to hundreds of microns). The full-dispersion phonon Monte Carlo (PMC) simulation technique, which we describe in detail, involves a stochastic solution to the phonon Boltzmann transport equation with the relevant scattering mechanisms (edge, ...
متن کاملAnalytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion
We describe the implementation of a Monte Carlo model for electron transport in silicon. The model uses analytic, nonparabolic electron energy bands, which are computationally efficient and sufficiently accurate for future low-voltage s,1 Vd nanoscale device applications. The electron-lattice scattering is incorporated using an isotropic, analytic phonon-dispersion model, which distinguishes be...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2007
ISSN: 1742-6596
DOI: 10.1088/1742-6596/92/1/012078